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Electron transporting water-gated thin film transistors
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10.1063/1.4757131
/content/aip/journal/apl/101/14/10.1063/1.4757131
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/14/10.1063/1.4757131
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Compression isotherm of stearic acid Langmuir monolayer. The inset shows the LS deposition technique.

Image of FIG. 2.
FIG. 2.

Schematic illustration (not to scale) of the water gating setup, as described. Inset: Positive bias applied to gate needle leads to an electron accumulation layer at the ZnO surface. Also shown are the anionic EDL in the water near the gate needle and the cationic EDL in the water near the ZnO surface.

Image of FIG. 3.
FIG. 3.

Output (a) and saturated transfer (b) characteristics of water-gated HMDS-ZnO TFTs. Gate voltage step between different output characteristics in (a) was 0.2 V. In (b), the source-drain voltage for the saturated transfer characteristics was 0.9 V. The dashed and solid lines in (b) refer to the ISD 1/2 and log ISD scales, respectively.

Image of FIG. 4.
FIG. 4.

Output characteristics of water-gated ZnO TFTs, using the tip of a straight tungsten needle. (a) HMDS-ZnO. Note the smaller drain currents, lack of saturation, and stronger hysteresis, compared to HMDS-ZnO gated with L-shaped needle Fig. 3(a). (b) Stearic acid-ZnO. Source-drain currents are smaller still, and there is visible source-to-gate leakage.

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/content/aip/journal/apl/101/14/10.1063/1.4757131
2012-10-02
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electron transporting water-gated thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/14/10.1063/1.4757131
10.1063/1.4757131
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