Full text loading...
Sheet resistance of C-doped GST films as evolved with a heating rate of 40 °C/min, and the inset is the linear fitted curves of the amorphous state redrawn as a function of 1/k BT.
(a) Programmed and measured temperature as a function of time during heating at 40 °C/min to 400 °C. XRD peak intensity as a function of temperature during heating of (b) GST film, and (c) GSTC18% film. The evolution of structure with ascending temperature is indicated for both films.
(a) Resistance–voltage characteristics of PCM cell using GSTC18% material at different voltage pulses. (b) Endurance characteristics of PCM cell using GSTC18% material.
Optical parameters Eg opt for amorphous and crystalline C-doped GST films. The band gap energies E g of amorphous films estimated from resistance measurement are listed on the right column for comparison.
Article metrics loading...