1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Carbon-doped Ge2Sb2Te5 phase change material: A candidate for high-density phase change memory application
Rent:
Rent this article for
USD
10.1063/1.4757137
/content/aip/journal/apl/101/14/10.1063/1.4757137
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/14/10.1063/1.4757137

Figures

Image of FIG. 1.
FIG. 1.

Sheet resistance of C-doped GST films as evolved with a heating rate of 40 °C/min, and the inset is the linear fitted curves of the amorphous state redrawn as a function of 1/k BT.

Image of FIG. 2.
FIG. 2.

(a) Programmed and measured temperature as a function of time during heating at 40 °C/min to 400 °C. XRD peak intensity as a function of temperature during heating of (b) GST film, and (c) GSTC18% film. The evolution of structure with ascending temperature is indicated for both films.

Image of FIG. 3.
FIG. 3.

(a) Resistance–voltage characteristics of PCM cell using GSTC18% material at different voltage pulses. (b) Endurance characteristics of PCM cell using GSTC18% material.

Tables

Generic image for table
Table I.

Optical parameters Eg opt for amorphous and crystalline C-doped GST films. The band gap energies E g of amorphous films estimated from resistance measurement are listed on the right column for comparison.

Loading

Article metrics loading...

/content/aip/journal/apl/101/14/10.1063/1.4757137
2012-10-02
2014-04-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Carbon-doped Ge2Sb2Te5 phase change material: A candidate for high-density phase change memory application
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/14/10.1063/1.4757137
10.1063/1.4757137
SEARCH_EXPAND_ITEM