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Carbon-doped Ge2Sb2Te5 phase change material: A candidate for high-density phase change memory application
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10.1063/1.4757137
/content/aip/journal/apl/101/14/10.1063/1.4757137
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/14/10.1063/1.4757137
/content/aip/journal/apl/101/14/10.1063/1.4757137
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/content/aip/journal/apl/101/14/10.1063/1.4757137
2012-10-02
2014-07-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Carbon-doped Ge2Sb2Te5 phase change material: A candidate for high-density phase change memory application
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/14/10.1063/1.4757137
10.1063/1.4757137
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