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Impact of gate resistance in graphene radio frequency transistors
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10.1063/1.4757422
/content/aip/journal/apl/101/14/10.1063/1.4757422
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/14/10.1063/1.4757422
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Representative dc characteristics of the graphene RF FETs: (a) transfer, (b) transconductance, (c) output, and (d) output conductance.

Image of FIG. 2.
FIG. 2.

Representative ac characteristics of two 400 nm graphene RF FETs with different gate resistances ( 2 V). (a) The frequency dependence of the current gain is nearly identical. The extrinsic (solid lines) and intrinsic (dashed lines) frequency response of both devices follows behavior. (b) The extrinsic maximum available gain of both devices also exhibits the well-behaved −20 dB/dec response. However, MAG for the lower gate resistance device is shifted to higher frequencies.

Image of FIG. 3.
FIG. 3.

Scaling characteristics of in terms of and for all gate lengths. (a) increases almost linearly as increases, as observed by fitting to Eq. (1) (solid line). for all devices, as denoted by all points being above the line (dashed line). Extrapolation of from the data allows for the ratio to be determined when 0 (where and 0). The corresponding lines are plotted for each (dotted lines). (b) The percent change of relative to for each . The data are fitted to Eq. (2) (solid lines). (c) The derivative of shows the rate of change for each . This rate is nearly identical for the 700 nm and 1000 nm devices, while it is much lower for the 400 nm devices. Inset: (GHz  nm) as a function of (nm) is roughly constant.

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/content/aip/journal/apl/101/14/10.1063/1.4757422
2012-10-02
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact of gate resistance in graphene radio frequency transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/14/10.1063/1.4757422
10.1063/1.4757422
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