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Growth and characterization of LuAs films and nanostructures
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Image of FIG. 1.
FIG. 1.

Temperature-dependent resistivity of a 10 ML LuAs film and a 600 nm LuAs film normalized by their room-temperature resistivity. Resistivity variation of <20% from 77 K to 297 K is observed in the thin film, and ∼2× in the thick film. The negative temperature coefficient observed is consistent with semimetallic transport.

Image of FIG. 2.
FIG. 2.

Transmission spectra for a 0.6 μm film of LuAs and a 0.5 μm film of ErAs. The LuAs film exhibited superior transmission over the technologically important near-IR 1.3–1.55 μm range, despite being 20% thicker. Absorption peaks were red-shifted to longer wavelengths by ∼150 nm in LuAs, as compared with ErAs.

Image of FIG. 3.
FIG. 3.

Reflectivity spectra for a 0.6 μm film of LuAs and a 0.5 μm film of ErAs. A red-shift of ∼250 nm is evident in the Drude edge of the LuAs film, with respect to the ErAs film.

Image of FIG. 4.
FIG. 4.

Cross-sectional transmission electron microscopy (XTEM) images along (110) zone-axis of a LuAs/GaAs multilayer stack. (a) The complete multilayer structure, (b) planar defect formation following the 3.0 ML deposition of LuAs, (c) 1.0 ML deposition of LuAs nanoparticles.

Image of FIG. 5.
FIG. 5.

Plan-view transmission electron microscopy image of a LuAs/GaAs multilayer stack, 1.8 ML LuAs/50 nm GaAs 5× repetition. Imaged sample 20–70 nm in thickness, potentially showing 1–2 nanoparticle layers.

Image of FIG. 6.
FIG. 6.

Absorption spectra for LuAs superlattice structures (and similarly grown ErAs superlattice structures), each 1 μm total epi-layer thickness, with equal volumetric RE-As concentration. The absorption peak shifted to longer wavelengths for larger depositions, while maintaining a relatively narrow linewidth at longer wavelengths.


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Table I.

Sample structures for LuAs and ErAs superlattice absorption studies.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth and characterization of LuAs films and nanostructures