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Field-effect diode based on electron-induced Mott transition in NdNiO3
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10.1063/1.4757865
/content/aip/journal/apl/101/14/10.1063/1.4757865
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/14/10.1063/1.4757865
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Temperature dependence of resistance for a extended NNO/STO film demonstrating a hysteretic MIT at 150 K. The transport characteristics were measured in the Van der Pauw geometry. The shaded area between 50 K and 150 K indicates the region of percolation of insulating phase in the metallic state. (b) Hall coefficient and (c) Hall carrier density of the film. Note that in the insulating phase at , the uncertainty of measurement is very large due to the high resistance. Dashed line in (c) indicates a quasi-linear temperature dependence of the carrier concentration. (d) Diagram showing the relationship between temperature and the phase transitions in NNO upon cooling and warming.

Image of FIG. 2.
FIG. 2.

(a) Schematic and an optical micrograph of the NNO/STO-based field-effect diode structure. (b) Forward-bias regime of the device: electron accumulation is induced in the NNO channel by a positive drain-source voltage . (c) Reverse-bias regime at .

Image of FIG. 3.
FIG. 3.

Temperature dependence of the device resistance upon cooling (a) and warming (b).

Image of FIG. 4.
FIG. 4.

I-V curves obtained after increasing T from 6 K (solid red), and decreasing T from 295 K (dashed blue), at (a) 290 K () and (b) 110 K (). Conductance threshold voltage is marked by an arrow.

Image of FIG. 5.
FIG. 5.

(a) Hysteretic I-V characteristics at T = 100 K, obtained by sequential scanning of the bias voltage from to 2 V, 0 V, 1.5 V, and finally back to −2 V. The current measured while scanning between the bias values u and v is labeled . Inset shows I-V data close to . (b) Relative differences between the initial scan and each of the subsequent scans.

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/content/aip/journal/apl/101/14/10.1063/1.4757865
2012-10-05
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Field-effect diode based on electron-induced Mott transition in NdNiO3
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/14/10.1063/1.4757865
10.1063/1.4757865
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