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Atomic force microscope image of the fabricated InGaAs/GaAs QSL array.
PL spectra (77 K) comparison between (a) as-grown 10 nm In0.18Ga0.82As/GaAs QW, (b) as-processed QSL from (a), and (c) QSL from (b) with a 50 nm regrown GaAs cap layer.
Temperature dependence of the spontaneous emission peak wavelength of (a) GaAs substrate, (b) InGaAs single QW, and (c) QSL array. The dashed and dotted lines are calculated GaAs and InGaAs QW energy-gap values between 77 and 200 K, respectively.
The polar plot of angular dependence of normalized PL peak intensities at 77 K in In0.18Ga0.82As/GaAs QSL array (solid circle), In0.22Ga0.78As/GaAs QSL array (empty circle), and InAs/GaAs SCQDs (solid triangle). Data beyond 60° are not included due to excessive noises.
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