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Monolithic integration of high electron mobility InAs-based heterostructure on exact (001) Silicon using a GaSb/GaP accommodation layer
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10.1063/1.4758292
/content/aip/journal/apl/101/14/10.1063/1.4758292
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/14/10.1063/1.4758292
/content/aip/journal/apl/101/14/10.1063/1.4758292
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/content/aip/journal/apl/101/14/10.1063/1.4758292
2012-10-05
2014-07-13
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Monolithic integration of high electron mobility InAs-based heterostructure on exact (001) Silicon using a GaSb/GaP accommodation layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/14/10.1063/1.4758292
10.1063/1.4758292
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