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Systematic optimization of quantum junction colloidal quantum dot solar cells
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) EQE of devices employing undoped and Ag-doped CQDs showing that Ag doping leads to a greater depletion in the n-layer, inset: hole density (p) as measured by FETs for films made with undoped and Ag-doped PbS CQDs; expected JSC shown as calculated from (a). (b) Simulated EQE curves showing an enhancement in the near infrared and across part of the visible, while a slight reduction around 400 nm due to decreased depletion in the p-layer.

Image of FIG. 2.
FIG. 2.

(a) Energy band diagrams of device employing an AZO electrode in place of an Al contact. X-axis is not to scale. The AZO also serves as a hole blocking layer. (b) Stability of a >5% devices across all performance metrics for 60 h (c) Temperature stability of a QJ device after annealing at 90 °C for 3 h, showing little change in JV characteristics.

Image of FIG. 3.
FIG. 3.

(a) J-V curve of best performing device showing a PCE of 6.1%. (b) Performance of 60 devices made over 1 month, showing high reproducibility and little deviation in PCE (PCE = 5.6 ± 0.2%).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Systematic optimization of quantum junction colloidal quantum dot solar cells