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Complex transport behavior accompanying domain switching in La0.1Bi0.9FeO3 sandwiched capacitors
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Out-of-plane domain structure of the non-etched LBFO surface successively poled by positive bias (large square, 2μm × 2μm) and negative bias (center square, 0.5μm × 0.5μm). (b) Experiment setup for the polarization switching by electric pulses. (c) Time dependence of the switching current with varied negative Vpulse . (d) 2Pr-Vpulse curve derived from the transient current.

Image of FIG. 2.
FIG. 2.

(a) I-V curves measured at each intermediate polarization state. (b) R-Vpulse curve with a minimal value at coercive voltage. (c) Resistance distributions of the DPS, UPS, and ZPS poled by the inset pulse trains.

Image of FIG. 3.
FIG. 3.

I-V curves measured after the treatments of ±40 V alternative pulses (a) and −40 V identical pulses (b). Inset: Resistance (read at −4 V) dependence on switching cycles or pulse numbers. (c) Band diagram of the Ag/LBFO/LSMO device.

Image of FIG. 4.
FIG. 4.

(a) Frequency dependence of the electric modulus M″ (imaginary part) after the treatment by 1000 alternative pulses or 1000 identical pulses. (b) Cole-cole plots of the real and imaginary impedances. Hollow symbols are experimental data and solid lines are results of curve-fitting. (c) Schematic domain structure of the LBFO film after alternative or identical pulse treatment. Local leakage paths form along the conductive domain walls. (d) Variation of Pr under different pulse treatments.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Complex transport behavior accompanying domain switching in La0.1Bi0.9FeO3 sandwiched capacitors