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Output characteristics of AlGaN/GaN HEMTs, with VGS varied from 0 V to −7 V in 1 V steps and at a VDS sweep rate of 0.1 V/s. The devices had a gate width of 2 × 50 μm, a gate length of 0.25 μm, and a source-drain gap of 4 μm. Kink effect is apparent in the IDS step at a particular critical voltage.
PL spectra of wafers with different Fe-doping level (Fe concentration in GaN at the AlGaN/GaN interface given). The spectra are normalized to the GaN band-edge peak at ∼3.4 eV after baseline subtraction.
EL spectra from the gate-drain region of AlGaN/GaN HEMTs on selected samples (Fe concentration at AlGaN/GaN interface given), operated at VDS = 20 V and VGS = 0 V. The EL intensity was normalized to the drain current.
Normalized kink size and integrated YL intensity from PL as a function of Fe concentration. The kink size represents an average of the kink in the output characteristics for different VGS (0, −1, −2, −3, −4 V). Both data sets were normalized to the value of the wafer without Fe.
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