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Origin of kink effect in AlGaN/GaN high electron mobility transistors: Yellow luminescence and Fe doping
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10.1063/1.4757993
/content/aip/journal/apl/101/15/10.1063/1.4757993
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/15/10.1063/1.4757993
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Output characteristics of AlGaN/GaN HEMTs, with VGS varied from 0 V to −7 V in 1 V steps and at a VDS sweep rate of 0.1 V/s. The devices had a gate width of 2 × 50 μm, a gate length of 0.25 μm, and a source-drain gap of 4 μm. Kink effect is apparent in the IDS step at a particular critical voltage.

Image of FIG. 2.
FIG. 2.

PL spectra of wafers with different Fe-doping level (Fe concentration in GaN at the AlGaN/GaN interface given). The spectra are normalized to the GaN band-edge peak at ∼3.4 eV after baseline subtraction.

Image of FIG. 3.
FIG. 3.

EL spectra from the gate-drain region of AlGaN/GaN HEMTs on selected samples (Fe concentration at AlGaN/GaN interface given), operated at VDS = 20 V and VGS = 0 V. The EL intensity was normalized to the drain current.

Image of FIG. 4.
FIG. 4.

Normalized kink size and integrated YL intensity from PL as a function of Fe concentration. The kink size represents an average of the kink in the output characteristics for different VGS (0, −1, −2, −3, −4 V). Both data sets were normalized to the value of the wafer without Fe.

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/content/aip/journal/apl/101/15/10.1063/1.4757993
2012-10-10
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Origin of kink effect in AlGaN/GaN high electron mobility transistors: Yellow luminescence and Fe doping
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/15/10.1063/1.4757993
10.1063/1.4757993
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