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Gallium nitride-based light-emitting diodes with embedded air voids grown on Ar-implanted AlN/sapphire substrate
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10.1063/1.4757996
/content/aip/journal/apl/101/15/10.1063/1.4757996
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/15/10.1063/1.4757996
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Figures

Image of FIG. 1.
FIG. 1.

Schematic illustration of (a) Ar-implanted AlN/sapphire template, (b) u-GaN layer grown on the AIAS, (c) lateral epitaxial growth occurs over the Ar-implanted regions on the AIAS, and (d) air voids embedded in the u-GaN layer.

Image of FIG. 2.
FIG. 2.

SEM images (a) typical top-view micrograph from u-GaN epitaxial layer grown on an AIAS, (b) cross-section view obtained from a representative LED grown on an AIAS.

Image of FIG. 3.
FIG. 3.

(a) Relative output power of the LED-I and LED-II as a function of injection current, (b) illustration of photons paths in the LED-I, and (c) near-field image from the LED-I driven under a current of 10 mA.

Image of FIG. 4.
FIG. 4.

Room-temperature current-voltage (I-V) characteristics of LED-I and LED-II.

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/content/aip/journal/apl/101/15/10.1063/1.4757996
2012-10-08
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Gallium nitride-based light-emitting diodes with embedded air voids grown on Ar-implanted AlN/sapphire substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/15/10.1063/1.4757996
10.1063/1.4757996
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