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Schematic illustration of (a) Ar-implanted AlN/sapphire template, (b) u-GaN layer grown on the AIAS, (c) lateral epitaxial growth occurs over the Ar-implanted regions on the AIAS, and (d) air voids embedded in the u-GaN layer.
SEM images (a) typical top-view micrograph from u-GaN epitaxial layer grown on an AIAS, (b) cross-section view obtained from a representative LED grown on an AIAS.
(a) Relative output power of the LED-I and LED-II as a function of injection current, (b) illustration of photons paths in the LED-I, and (c) near-field image from the LED-I driven under a current of 10 mA.
Room-temperature current-voltage (I-V) characteristics of LED-I and LED-II.
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