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A calculation procedure for electron induced light emission combines Monte Carlo simulation and FDTD method. Electron trajectories are calculated by Monte Carlo simulation. A position of a dipole excited by the electron determined by the electron trajectories. Light intensity distribution is calculated by adding each dipole emission.
Calculation results of electron trajectories in the silicon nitride film using Monte Carlo simulation. The thickness of the silicon nitride was 70 nm, and the accelerating voltages of the incident electron beam were (a) 2, (b) 4, and (c) 6 kV.
Calculated light intensity distributions in (a) y-z plane and (b) x-y plane of 10 nm behind the back side of a thin film, corresponding to the dashed line in (a). The intensity represents a logarithmic scale. Light intensity profile along line a-a' in (b) was over-plotted. The thickness of thin film was 50 nm and the accelerating voltage of the incident electron beam was 5 kV.
The optical spot size and the peak light intensity of the spot as a function of the thickness of . The accelerating voltage of incident electron beam was 5 kV.
The spot size and the peak light intensity of the spot as a function of the accelerating voltage of incident electron beam. The thickness of thin film was 50 nm.
The percentage of contribution to the light intensity of the optical spot as a function of the depth position of the light emission. The origin of the depth position is top side surface of the thin film.
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