Full text loading...
Cross section of a semiconductor slab between air and a back reflector, with a schematic representation of light trapping by an average Lambertian ray.
Cross section of a semiconductor slab between air and a back reflector, with a schematic representation of light trapping by an average ray for a non-Lambertian distribution of light entering the cell.
(a) Schematic view of the device architecture considered here. (b) and as a function of wavelength calculated for light scattering in silicon from the rough and smooth electrodes. The scale for ranges between no light trapping () and Lambertian light distribution ().
Current as a function of thickness for cells on two differently rough electrodes (experiment and simulation).
EQE and 1 − R curves (experiment, dash and simulation, plain) for a cell on rough and smooth electrodes, for two different intrinsic layer thicknesses: and . The numbers in parenthesis are current densities in . The dotted line is a simulation of the thick cell on the smooth substrate using the experimental scattering parameters () for all passes.
Simulated EQE curves of a thick cell on a rough electrode (initial EQE), and EQE to expect when going to Lambertian light scattering (Lambertian), suppressing all parasitic absorption (No AP), or using an absorber layer of 100% crystallinity (instead of 60% in other cases). The Yablonovitch limit is also indicated. The numbers in parenthesis are current densities in . was set to zero for all curves.
Article metrics loading...