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Excellent p-n control in a high temperature thermoelectric boride
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10.1063/1.4758297
/content/aip/journal/apl/101/15/10.1063/1.4758297
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/15/10.1063/1.4758297

Figures

Image of FIG. 1.
FIG. 1.

Crystal structure of Y x Al y B14.

Image of FIG. 2.
FIG. 2.

(a) Powder XRD pattern of Y x Al y B14 (x ∼ 0.57) after SPS treatment, and Al occupancy dependence on the (b) SPS sintering temperature (for the samples originally sintered in Ar at 1400 °C) and (c) sintering temperature (for the samples originally sintered in vacuum).

Image of FIG. 3.
FIG. 3.

Temperature dependence of electrical resistivity of Y x Al y B14 (x ∼ 0.57). The logarithmic ρ is plotted versus T −0.25.

Image of FIG. 4.
FIG. 4.

Temperature dependence of the Seebeck coefficient (a) plotted versus T 0.5 and effect of Al occupancy y on the Seebeck coefficient measured at 1000 K.

Image of FIG. 5.
FIG. 5.

Temperature dependence of the (a) power factor, PF; (b) thermal conductivity, κ; and (c) ZT. The estimated minimum thermal conductivity Λmin (Ref. 23) is also plotted.

Tables

Generic image for table
Table I.

Details of synthesis of the Y x Al y B14 sample fabricated through SPS treatment.

Generic image for table
Table II.

The number of valence electrons from Y and Al atoms.

Generic image for table
Table III.

Characteristic temperature and γ coefficient of specific heat in Y x Al y B14.

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/content/aip/journal/apl/101/15/10.1063/1.4758297
2012-10-08
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Excellent p-n control in a high temperature thermoelectric boride
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/15/10.1063/1.4758297
10.1063/1.4758297
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