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High quality ultrathin films on and by molecular beam epitaxy with a radio frequency cracker cell
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View: Figures


Image of FIG. 1.
FIG. 1.

Diagram of the RF Se cracker used in this study: on the bottom is a Knudsen cell for Se, coupled to a RF coil as the plasma section on the top.

Image of FIG. 2.
FIG. 2.

(a) RHEED oscillations observed during growth of a 19 QL film. Inset is the RHEED pattern of the same 19 QL film captured immediately after deposition. (b) AFM image taken on a 5 QL thick film. (c) Depth profile of the black line that cut vertically across the sample shows that the fluctuations on top of the sample surface are smaller than 1 nm, and the step size is 1 nm.

Image of FIG. 3.
FIG. 3.

(a) X-ray diffraction patterns (log scale) for films of different thickness. (b) X-ray rocking curve of the peak for a 4 QL thick film (linear scale), with . (c) X-ray rocking curve of the peak for a 19 QL thick film, with .

Image of FIG. 4.
FIG. 4.

(a) Magnetoresistance of films of different thickness on , among which the 10 QL film was on a substrate and the others were on pure substrates. The circle indicates visible quantum oscillations in the 10 QL film, which was plotted in (b)after a smooth background was subtracted. (c) Magnetoresistance of 4 QL and 7 QL films on substrates (solid lines), showing a combination of both WAL and WL effects, compared to 4QL and 7 QL films on substrates (dashed lines) showing only WAL behavior.

Image of FIG. 5.
FIG. 5.

Cross-sectional TEM image of a 5 QL thick film grown on Si with a buffer layer about 12 nm thick.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High quality ultrathin Bi2Se3 films on CaF2 and CaF2/Si by molecular beam epitaxy with a radio frequency cracker cell