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Schematic of the asymmetric (a) and symmetric (b) material deposition and their expected bit profiles, (c) and (d) are the TEM cross section images of the thin film structure of the two films, respectively.
SEM image of the asymmetric (a) and symmetric (b) bits of 30 nm pitch (outlines show the expected positions of the magnetic material and HSQ posts). TEM cross section of the patterned bits with asymmetric (c) and symmetric (d) material deposition configurations showing the differences in the resultant magnetic bits from the two configurations for a bit pitch of 30 nm. (e) Shows an SEM image of the 30 nm pitch bits identifying the region where the TEM slice is taken.
Experimental data plot and corresponding DCD curves for bit pitch of 70 nm (a) and 30 nm (d) for theasymmetric (black) and symmetric (red) deposition methods. (b) and (e) SFD plots of the DCD curves in (a) and (d), respectively. MFM images illustrating the gradual switching of bit islands (bit pitch of (c) 70 nm and (f) 30 nm) at different applied magnetic fields for the asymmetric and symmetric deposition methods.
(a) MAGPAR simulation of the switching characteristic of a single bit with asymmetric and symmetric bit dimensions. (c) MAGPAR simulation of the variation of coercivity with the bit diameter at a constant pitch size of 30 nm as well as for constant separations of 16 and 20 nm. (d) MAGPAR simulation of the variation of the switching field with the bit separation. The assumed dimensions of the asymmetric (red) and symmetric (blue) are indicated in (c) and (d) which use a 4 × 4 array of bits (b).
Coercivity and switching field distributions of the samples fabricated by asymmetric and symmetric deposition methods.
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