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Improvement of resistive switching in NiO-based nanowires by inserting Pt layers
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10.1063/1.4758482
/content/aip/journal/apl/101/15/10.1063/1.4758482
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/15/10.1063/1.4758482
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Figures

Image of FIG. 1.
FIG. 1.

FE-SEM images of (a) NiO-based NWs embedded into AAO template; (b) x-ray diffraction patterns of the monolithic NiO (top panel) and multi-layer NiO/Pt NWs (bottom panel) after being oxidized in air ambient at 800 °C for 6 h.

Image of FIG. 2.
FIG. 2.

TEM images of (a) monolithic NiO NWs, (b) multilayered NiO/Pt NWs with tNiO ∼ 50 nm, and (c) multilayered NiO/Pt NWs with tNiO ∼100 nm.

Image of FIG. 3.
FIG. 3.

(a) I-V curves of monolithic NiO NWs and multilayered NiO/Pt NWs with tNiO ∼ 50 nm (gray line). The blue, green, and orange curves depict positive SET, negative RESET, and positive SET processes, respectively, for monolithic NiO NWs. (b) Temperature dependence of resistance at LRS for monolithic NiO NWs measured at 0.5 V.

Image of FIG. 4.
FIG. 4.

The cumulative probabilities of VSET and VRESET for monolithic NiO and multilayered NiO/Pt NW arrays with different tNiO.

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/content/aip/journal/apl/101/15/10.1063/1.4758482
2012-10-08
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improvement of resistive switching in NiO-based nanowires by inserting Pt layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/15/10.1063/1.4758482
10.1063/1.4758482
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