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(a) Schematic of the structures used for investigation of the 2D-3D transition occurring during growth of Ge directly on SiGe SRBs. (b) Dependence of hc on the Ge content in SiGe SRBs (bottom scale) and lattice mismatch (top scale) in the case of direct Ge deposition on SiGe buffer. Dashed line corresponds to the hc value when Ge is deposited on Si(001) substrates.
AFM images of the structures with (a) 4 ML of Ge deposited directly on Si0.82Ge0.18 relaxed buffer and (b) 4.5 ML of Ge deposited on 2 nm thick sSi layer grown on the same Si0.82Ge0.18 relaxed buffer. The size of images is 2 × 2 μm2.
(a) Schematic of the structures used for investigation of 2D−3D transition during growth of Ge on pre-deposited sSi layers. (b) Dependences of hc on sSi layer thickness for the structures with different Ge contents in SiGe SRBs. Dashed line corresponds to hc for Ge/Si(001) growth. Solid lines are guides for the eye.
Dependences of the amount of segregated Ge (dseg , lower part of the graph) and of the “real” critical thickness when taking Ge segregation into account (dseg + hc , upper part) on sSi layer thickness for the structures grown on different SiGe SRBs. Dashed line corresponds to the hc value for Ge/Si(001) growth. Solid lines are guides for the eye.
(a) Schematic of the structures used for investigation of the influence of “restoration” of surface roughness and Ge segregation on critical thickness. (b) Dependence of the normalized critical thickness on unstrained SiGe layer thickness separating Ge film from sSi layer. Ge content in the SiGe relaxed buffer is xGe = 36%. Dashed line is a guide for the eye.
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