1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
f
Localizing trapped charge carriers in NO2 sensors based on organic field-effect transistors
Rent:
Rent this article for
Access full text Article
/content/aip/journal/apl/101/15/10.1063/1.4758697
1.
1. A. Afzal, N. Cioffi, L. Sabbatini, and L. Torsi, Sens. Actuators B 171–172, 25 (2012).
http://dx.doi.org/10.1016/j.snb.2012.05.026
2.
2. C. Di Franco, A. Elia, V. Spagnolo, G. Scamarcio, P. M. LugarÃ, E. Ieva, N. Cioffi, L. Torsi, G. Bruno, M. Losurdo, M. Garcia, S. Wolter, A. Brown, and M. Ricco, Sensors 9, 3337 (2009).
http://dx.doi.org/10.3390/s90503337
3.
3. A. Das, R. Dost, T. Richardson, M. Grell, J. J. Morrison, and M. L. Turner, Adv. Mater. 19, 4018 (2007).
http://dx.doi.org/10.1002/adma.200701504
4.
4. J. Kong, N. R. Franklin, C. W. Zhou, M. G. Chapline, S. Peng, K. J. Cho, and H. J. Dai, Science 287, 622 (2000).
http://dx.doi.org/10.1126/science.287.5453.622
5.
5. D. H. Zhang, Z. Q. Liu, C. Li, T. Tang, X. L. Liu, S. Han, B. Lei, and C. W. Zhou, Nano Lett. 4, 1919 (2004).
http://dx.doi.org/10.1021/nl0489283
6.
6. S. M. Sze, Physics of Semiconductor Devices (Wiley-Interscience, New York, 1981).
7.
7. A. Andringa, J. R. Meijboom, E. C. P. Smits, S. G. J. Mathijssen, P. W. M. Blom, and D. M. de Leeuw, Adv. Funct. Mater. 21, 100 (2011).
http://dx.doi.org/10.1002/adfm.201001560
8.
8. A. Andringa, N. Vlietstra, E. C. P. Smits, M. Spijkman, H. L. Gomes, J. H. Klootwijk, P. W. M. Blom, and D. M. de Leeuw, Sens. Actuators B 171–172, 1172 (2012).
http://dx.doi.org/10.1016/j.snb.2012.06.062
9.
9. L. S. C. Pingree, O. G. Reid, and D. S. Ginger, Adv. Mater. 21, 19 (2009).
http://dx.doi.org/10.1002/adma.200801466
10.
10. V. Palermo, M. Palma, and P. Samori, Adv. Mater. 18, 145 (2006).
http://dx.doi.org/10.1002/adma.200501394
11.
11. S. G. J. Mathijssen, M. Spijkman, A. Andringa, P. A. van Hal, I. McCulloch, M. Kemerink, R. A. J. Janssen, and D. M. de Leeuw, Adv. Mater. 22, 5105 (2010).
http://dx.doi.org/10.1002/adma.201001865
12.
12. F. Gholamrezaie, A. Andringa, W. S. C. Roelofs, A. Neuhold, M. Kemerink, P. W. M. Blom, and D. M. de Leeuw, Small 8, 241 (2012).
http://dx.doi.org/10.1002/smll.201101467
13.
13. N. Stingelin-Stutzmann, E. C. P. Smits, H. Wondergem, C. Tanase, P. W. M. Blom, P. Smith, and D. M. de Leeuw, Nat. Mater. 4, 601 (2005).
http://dx.doi.org/10.1038/nmat1426
14.
14. M. B. Madec, P. J. Smith, A. Malandraki, N. Wang, J. G. Korvink, and S. G. Yeates, J. Mater. Chem. 20, 9155 (2010).
http://dx.doi.org/10.1039/c0jm01614d
15.
15. M. B. Madec, J. J. Morrison, V. Sanchez-Romaguera, M. L. Turner, and S. G. Yeates, J. Mater. Chem. 19, 6750 (2009).
http://dx.doi.org/10.1039/b910476c
16.
16. T. A. M. Ferenczi, C. Müller, D. D. C. Bradley, P. Smith, J. Nelson, and N. Stingelin, Adv. Mater. 23, 4093 (2011).
http://dx.doi.org/10.1002/adma.201102100
17.
17. X. R. Li, W. T. T. Smaal, C. Kjellander, B. van der Putten, K. Gualandris, E. C. P. Smits, J. Anthony, D. J. Broer, P. W. M. Blom, J. Genoe, and G. Gelinck, Org. Electron. 12, 1319 (2011).
http://dx.doi.org/10.1016/j.orgel.2011.04.020
18.
18. D. S. H. Charrier, M. Kemerink, B. E. Smalbrugge, T. de Vries, and R. A. J. Janssen, ACS Nano 2, 622 (2008).
http://dx.doi.org/10.1021/nn700190t
19.
19. J. Smith, R. Hamilton, I. McCulloch, N. Stingelin-Stutzmann, M. Heeney, D. D. C. Bradley, and T. D. Anthopoulos, J. Mater. Chem. 20, 2562 (2010).
http://dx.doi.org/10.1039/b921674j
20.
20. S. Huttner, M. Sommer, and M. Thelakkat, Appl. Phys. Lett. 92, 093302 (2008).
http://dx.doi.org/10.1063/1.2885712
21.
21. S. M. Lindner and M. Thelakkat, Macromolecules 37, 8832 (2004).
http://dx.doi.org/10.1021/ma0481656
22.
22. J. Veres, S. Ogier, G. Lloyd, and D. de Leeuw, Chem. Mater. 16, 4543 (2004).
http://dx.doi.org/10.1021/cm049598q
23.
23. J. J. Brondijk, M. Spijkman, F. van Seijen, P. W. M. Blom, and D. M. de Leeuw, Phys. Rev. B 85, 165310 (2012).
http://dx.doi.org/10.1103/PhysRevB.85.165310
24.
24. S. G. J. Mathijssen, M. Kemerink, A. Sharma, M. Coelle, P. A. Bobbert, R. A. J. Janssen, and D. M. de Leeuw, Adv. Mater. 20, 975 (2008).
http://dx.doi.org/10.1002/adma.200702688
25.
journal-id:
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/15/10.1063/1.4758697
Loading
/content/aip/journal/apl/101/15/10.1063/1.4758697
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/101/15/10.1063/1.4758697
2012-10-08
2014-07-30

Abstract

Field-effect transistors have emerged as NO sensors. The detection relies on trapping of accumulated electrons, leading to a shift of the threshold voltage. To determine the location of the trapped electrons we have delaminated different semiconductors from the transistors with adhesive tape and measured the surface potential of the revealed gate dielectric with scanning Kelvin probe microscopy. We unambiguously show that the trapped electrons are not located in the semiconductor but at the gate dielectric. The microscopic origin is discussed. Pinpointing the location paves the way to optimize the sensitivity of NO field-effect sensors.

Loading

Full text loading...

/deliver/fulltext/aip/journal/apl/101/15/1.4758697.html;jsessionid=tlwld583wwsv.x-aip-live-06?itemId=/content/aip/journal/apl/101/15/10.1063/1.4758697&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/apl
true
true
This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Localizing trapped charge carriers in NO2 sensors based on organic field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/15/10.1063/1.4758697
10.1063/1.4758697
SEARCH_EXPAND_ITEM