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(a) AFM image of InN QDs grown on InGaN layer. (b) AFM image of InGaN layer grown on GaN. (c), (d) I-V curves measured with two Al ohmic contacts deposited on InN QDs and InGaN layer, respectively.
Schematic illustration of the glucose sensing setup using working electrode comprised of InN QDs coated with GOD against a Ag/AgCl reference electrode, along with the possible electrochemical reaction near the electrode.
EMF as a function of the logarithmic glucose concentration ranging from 1 × 10−5 to 1 × 10−2 M. Exp. #1–3 denote three different experiments.
(a) EMF as a function of time of the InN QDs based potentiometric glucose biosensor for 500 μM glucose concentration. (b) EMF as a function of time of the InGaN layer based potentiometric glucose biosensor for 1 mM glucose concentration.
(a) EMF as a function of time with adding 50 μM ascorbic acid (AA) and uric acid (UA) in 500 μM glucose solution. (b) Repeated experiments for fourteen consecutive days in 500 μM glucose solution using same biosensor.
EMF as a function of temperature of the InN QDs based biosensor in 500 μM glucose solution.
Functional properties of different available enzymatic glucose biosensors.
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