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(a) One module band diagram for OWIGS271. Layers are marked by their thicknesses in nm. The 8.2 nm well is doped to . (b) Two module band diagram for OWIGS271, showing parasitic interaction between injector and lower laser level ().
Experimental data for OWIGS271 clad in Ta/Cu waveguides with wet-etched defined mesas.
One module band diagram for TWIGS254. Layers are labeled by their thicknesses in nm. The 3.4 nm barrier is delta-doped in the middle to .
Experimental data for TWIGS254 clad in Ta/Au waveguides with dry-etched defined mesas. (a) L-I versus temperature. (b) I-V at 8 K. The dotted lines mark the lasing dynamic range in current (compare (a)). The arrow marks the parasitic shoulder attributed to alignment between the injector and lower laser levels.
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