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Optical micrographs of the glass/film interface after annealing for the boron-doped AIC-Si and undoped AIC-Si.
Crystalline fraction calculated from Raman spectra for the boron-doped AIC-Si and undoped AIC-Si. Inset is their coverage percentage.
XRD patterns for as-deposited boron-doped a-Si and boron-doped AIC-Si annealed at various times.
SIMS plots of (a) as-deposited boron-doped a-Si and (b) boron-doped AIC-Si annealed for 1 h, as well as (c) 10 h.
A model proposed to explain the mechanism of boron-doped AIC-Si.
Resistivity and carrier concentration for the boron-doped AIC-Si and undoped AIC-Si.
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