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(a) Sample configuration and measurements of the two-terminal device for CeO2/LSCMO junction. (b) The XRD patterns of CeO2/LSCMO junction with various thicknesses of CeO2 films (10, 20, and 30 nm) and with various O2 pressures during deposition (30, 10 Pa, and without O2).
(a) Thickness dependence of the I-V characteristics for 10, 20, 30, and 50 nm CeO2 films in CeO2/LSCMO junction (under semilog scale). (b)The thickness dependence of the RS ratio for the CeO2/LSCMO junction. (c) The set and reset voltages plotted as a function of CeO2 thickness in CeO2/LSCMO system.
The I-V characteristics of CeO2 deposited at various O2 pressures in CeO2 (10 nm)/LSCMO system (under semilog scale) (a) 30 Pa, (b) 10 Pa, and (c) without O2.
The I-V characteristics of CeO2 (10 nm)/LSCMO junction deposited at various O2 pressures (under semilog scale) (a) CeO2 (30 Pa)/LSCMO (30 Pa), (b) CeO2 (without O2)/LSCMO (30 Pa), (c) CeO2 (30 Pa)/LSCMO (without O2), (d) temperature dependence of the I-V characteristics of CeO2 (20 nm)/LSCMO system (under semilog scale). The insets (a)–(c) show the corresponding structure of CeO2 (10 nm)/LSCMO system. The inset (d) shows the temperature dependence of the resistance of LSCMO film measured by the system that analyzes the physical property.
Schematic band diagram of electronic trapping-assisted tunneling model for the CeO2/LSCMO system.
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