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Relative intensity noise of a quantum well transistor laser
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10.1063/1.4760225
/content/aip/journal/apl/101/15/10.1063/1.4760225
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/15/10.1063/1.4760225
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(i) The SEM top-view image of a TL device metallized in a common emitter configuration. (ii)-(iv) The optical spectra of an edge-emitting TL measured at T = 0 °C and CE voltage VCE = 1.5 V. The bias currents are IB = 30, 40, and 70 mA.

Image of FIG. 2.
FIG. 2.

(i) Collector IC-VCE characteristics and (ii) optical output power versus VCE (L-VCE) of a single quantum well transistor laser (1 μm width, L = 300 μm) at 0 °C. The threshold current of the TL is 25 mA with the open circles indicating the bias point for optical spectra and laser RIN, and optical response measurements for comparison.

Image of FIG. 3.
FIG. 3.

Bias dependent (i) optical response and (ii) RIN for the transistor laser of Figs. 1 and 2 for T = 0 °C, VCE = 1.5 V. Note the correspondence of the resonance peak between the optical response and the RIN.

Image of FIG. 4.
FIG. 4.

Comparison of the RIN between a transistor laser and a comparable diode laser. The optical power of each coupled into a fiber are both 4 mW, with the coupling efficiency around 88%–92%.

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/content/aip/journal/apl/101/15/10.1063/1.4760225
2012-10-11
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Relative intensity noise of a quantum well transistor laser
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/15/10.1063/1.4760225
10.1063/1.4760225
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