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(i) The SEM top-view image of a TL device metallized in a common emitter configuration. (ii)-(iv) The optical spectra of an edge-emitting TL measured at T = 0 °C and CE voltage VCE = 1.5 V. The bias currents are IB = 30, 40, and 70 mA.
(i) Collector IC-VCE characteristics and (ii) optical output power versus VCE (L-VCE) of a single quantum well transistor laser (1 μm width, L = 300 μm) at 0 °C. The threshold current of the TL is 25 mA with the open circles indicating the bias point for optical spectra and laser RIN, and optical response measurements for comparison.
Bias dependent (i) optical response and (ii) RIN for the transistor laser of Figs. 1 and 2 for T = 0 °C, VCE = 1.5 V. Note the correspondence of the resonance peak between the optical response and the RIN.
Comparison of the RIN between a transistor laser and a comparable diode laser. The optical power of each coupled into a fiber are both 4 mW, with the coupling efficiency around 88%–92%.
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