banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Topological insulator Bi2Te3 films synthesized by metal organic chemical vapor deposition
Rent this article for
View: Figures


Image of FIG. 1.
FIG. 1.

(a) Representative XRD pattern on a Bi2Te3 film grown by MOCVD on GaAs (001) substrate. The peaks are labeled with (hkl) indices. (b) Representative Raman spectrum (measured with a 532 nm laser). Two characteristic Raman peaks, and (Ref. 28), are labeled. Inset shows photograph of a typical as-grown Bi2Te3 film (thickness ∼ 1 μm, as used in this work).

Image of FIG. 2.
FIG. 2.

ARPES characterization of a Bi2Te3 thin film grown by MOCVD on GaAs (001). (a) ARPES band dispersion map along the Γ-K direction, clearly revealing the V-shaped topological surface state band. (b) ARPES Fermi surface map. The hexagonal-shaped (due to hexagonal warping, see Refs. 4 and 31) of the surface state Fermi surface is clearly revealed.

Image of FIG. 3.
FIG. 3.

Temperature dependence of sheet resistance (per square) Rs in sample B (thickness ∼1 μm), displaying a metallic behavior with Rs(300 K)/Rs(15 K) ∼ 16. The black dash line shows the fitting to Eq. (1). The inset shows Hall resistances Rxy of sample B measured at 15 K and 300 K. The dash lines are the linear fittings of the corresponding data.

Image of FIG. 4.
FIG. 4.

Seebeck coefficient (S) of sample B measured between 220 K and 400 K.


Article metrics loading...


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Topological insulator Bi2Te3 films synthesized by metal organic chemical vapor deposition