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(a) Representative XRD pattern on a Bi2Te3 film grown by MOCVD on GaAs (001) substrate. The peaks are labeled with (hkl) indices. (b) Representative Raman spectrum (measured with a 532 nm laser). Two characteristic Raman peaks, and (Ref. 28), are labeled. Inset shows photograph of a typical as-grown Bi2Te3 film (thickness ∼ 1 μm, as used in this work).
ARPES characterization of a Bi2Te3 thin film grown by MOCVD on GaAs (001). (a) ARPES band dispersion map along the Γ-K direction, clearly revealing the V-shaped topological surface state band. (b) ARPES Fermi surface map. The hexagonal-shaped (due to hexagonal warping, see Refs. 4 and 31) of the surface state Fermi surface is clearly revealed.
Temperature dependence of sheet resistance (per square) Rs in sample B (thickness ∼1 μm), displaying a metallic behavior with Rs(300 K)/Rs(15 K) ∼ 16. The black dash line shows the fitting to Eq. (1). The inset shows Hall resistances Rxy of sample B measured at 15 K and 300 K. The dash lines are the linear fittings of the corresponding data.
Seebeck coefficient (S) of sample B measured between 220 K and 400 K.
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