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Topological insulator Bi2Te3 films synthesized by metal organic chemical vapor deposition
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10.1063/1.4760226
/content/aip/journal/apl/101/16/10.1063/1.4760226
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/16/10.1063/1.4760226
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Representative XRD pattern on a Bi2Te3 film grown by MOCVD on GaAs (001) substrate. The peaks are labeled with (hkl) indices. (b) Representative Raman spectrum (measured with a 532 nm laser). Two characteristic Raman peaks, and (Ref. 28), are labeled. Inset shows photograph of a typical as-grown Bi2Te3 film (thickness ∼ 1 μm, as used in this work).

Image of FIG. 2.
FIG. 2.

ARPES characterization of a Bi2Te3 thin film grown by MOCVD on GaAs (001). (a) ARPES band dispersion map along the Γ-K direction, clearly revealing the V-shaped topological surface state band. (b) ARPES Fermi surface map. The hexagonal-shaped (due to hexagonal warping, see Refs. 4 and 31) of the surface state Fermi surface is clearly revealed.

Image of FIG. 3.
FIG. 3.

Temperature dependence of sheet resistance (per square) Rs in sample B (thickness ∼1 μm), displaying a metallic behavior with Rs(300 K)/Rs(15 K) ∼ 16. The black dash line shows the fitting to Eq. (1). The inset shows Hall resistances Rxy of sample B measured at 15 K and 300 K. The dash lines are the linear fittings of the corresponding data.

Image of FIG. 4.
FIG. 4.

Seebeck coefficient (S) of sample B measured between 220 K and 400 K.

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/content/aip/journal/apl/101/16/10.1063/1.4760226
2012-10-17
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Topological insulator Bi2Te3 films synthesized by metal organic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/16/10.1063/1.4760226
10.1063/1.4760226
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