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(a) Cross-sectional TEM image for the sample with a Si/Ge bi-layer after annealing. The insets show the EDS analysis at different locations and electron diffraction pattern at SiGe nanocrystal region. (b) Band diagram of the WORM memory device.
Normalized C-V characteristics measured at 1 MHz for devices before and after applying different pulse conditions. Displayed in the inset is the comparison of C-V curve for devices with and without nanocrystals before applying any pulse.
I-V characteristics measured at (a) positive bias and (b) negative bias for devices after applying various pulse conditions.
Retention behavior at room temperature and 100 °C for devices programmed by −10 V for 1 s. The inset demonstrates the performance of read endurance for devices after applying different pulse conditions.
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