1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Formation of SiGe nanocrystals embedded in Al2O3 for the application of write-once-read-many-times memory
Rent:
Rent this article for
USD
10.1063/1.4760259
/content/aip/journal/apl/101/16/10.1063/1.4760259
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/16/10.1063/1.4760259
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Cross-sectional TEM image for the sample with a Si/Ge bi-layer after annealing. The insets show the EDS analysis at different locations and electron diffraction pattern at SiGe nanocrystal region. (b) Band diagram of the WORM memory device.

Image of FIG. 2.
FIG. 2.

Normalized C-V characteristics measured at 1 MHz for devices before and after applying different pulse conditions. Displayed in the inset is the comparison of C-V curve for devices with and without nanocrystals before applying any pulse.

Image of FIG. 3.
FIG. 3.

I-V characteristics measured at (a) positive bias and (b) negative bias for devices after applying various pulse conditions.

Image of FIG. 4.
FIG. 4.

Retention behavior at room temperature and 100 °C for devices programmed by −10 V for 1 s. The inset demonstrates the performance of read endurance for devices after applying different pulse conditions.

Loading

Article metrics loading...

/content/aip/journal/apl/101/16/10.1063/1.4760259
2012-10-16
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Formation of SiGe nanocrystals embedded in Al2O3 for the application of write-once-read-many-times memory
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/16/10.1063/1.4760259
10.1063/1.4760259
SEARCH_EXPAND_ITEM