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Localized surface plasmon resonances in highly doped semiconductors nanostructures
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10.1063/1.4760281
/content/aip/journal/apl/101/16/10.1063/1.4760281
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/16/10.1063/1.4760281
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Scheme of the InAsSb grating (orange) on a GaSb substrate (blue). e, d, and w are the InAsSb thickness, the period of the grating, and the ribbon width, respectively.

Image of FIG. 2.
FIG. 2.

Reflectance spectra in both s (red line) and p (dark line) polarization. The periodicity of the grating is 540 nm and the ribbon width is 180 nm. Inset: SEM image of the InAsSb array.

Image of FIG. 3.
FIG. 3.

Reflectance spectra in normal incidence (black line) and with a angle with respect to the normal (red line) under p polarization. The periodicity of the grating is 540 nm and the ribbon width is 180 nm

Image of FIG. 4.
FIG. 4.

FDTD simulated reflectance spectrum for a grating with a periodicity of 540 nm and a ribbon width of 180 nm. Inset: intensity profile of the electric field associated to different LSPR. Note that units are not the same in x and y direction.

Image of FIG. 5.
FIG. 5.

FDTD simulations reflectance spectra for the same sample than Fig. 4 (black line) but with ribbon side walls (red line). Inset: AFM image of the structure (top center) and intensity profile of the electric field associated to different LSPR (left hand side). Note that units are not the same in x, y, and z direction.

Image of FIG. 6.
FIG. 6.

Reflectance spectra for samples with different ribbon widths of doped semiconductor: 180 nm (red line), 140 nm (blue line), and 100 nm (green line).

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/content/aip/journal/apl/101/16/10.1063/1.4760281
2012-10-17
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Localized surface plasmon resonances in highly doped semiconductors nanostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/16/10.1063/1.4760281
10.1063/1.4760281
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