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Electronic states and curved surface effect of silicon quantum dots
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10.1063/1.4761945
/content/aip/journal/apl/101/17/10.1063/1.4761945
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/17/10.1063/1.4761945
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Si-O-Si bridge bond on facet of Si QDs and its density of states. (b) Si-O-Si bridge bond on curved surface of Si QDs and its density of states. (c) Bonding energy of Si-O-Si bridge bond on curved surface of Si QDs. (d) Bonding energy of Si-O-Si bridge bond on facet of Si QDs.

Image of FIG. 2.
FIG. 2.

Si = O bond structures on curved surface (a) and on facet of Si QDs (b), and their density of states.

Image of FIG. 3.
FIG. 3.

(a) PL spectra on Si QDs prepared in oxygen atmosphere, in which peak A relates to type-I emission band, peaks C and D relate to type-II emission due to localized levels, respectively. (b) PL spectra on Si QDs prepared in oxygen atmosphere after rapidly annealing for 5 min, in which the peaks C and D related to the localized states occur, whose center is near 700 nm or 600 nm, respectively.

Image of FIG. 4.
FIG. 4.

(a) Type-II emission after suitable annealing and type-I emission on Si QDs before annealing; (b) physics model and proceeding of emission on Si QDs.

Image of FIG. 5.
FIG. 5.

(a) Level evolution of the localized states affected with the diameter of Si QDs with sphere shape. (b) Level evolution of the localized states affected with the curvature radius of Si QDs with sphere shape, which shows CS effect.

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/content/aip/journal/apl/101/17/10.1063/1.4761945
2012-10-22
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electronic states and curved surface effect of silicon quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/17/10.1063/1.4761945
10.1063/1.4761945
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