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(a) X-ray diffraction pattern for the PCMO/PMN-PT structure. (b) XRD phi scans taken on the PCMO (101) and PMN-PT (101) diffraction peaks, respectively. (c) Out-of-plane piezo-strain versus E for the PMN-PT substrate at 296 K. The inset is the P-E hysteresis loop for the PMN-PT substrate at 296 K (the blue one), 180 K (the red one), and 150 K (the black one), respectively. (d) The surface morphology of the PCMO film.
Relative change in the resistance of the PCMO film as a function of E applied to the PCMO/PMN-PT structure. The upper inset shows the XRD patterns in the vicinity of (002) diffraction peaks under E = 0 and 10 kV/cm.
Temperature dependence of the resistance for the PCMO film at H = 0 and 9 T when the PMN-PT substrate was in the and states, respectively. The upper panel of the inset shows the d(lnR)/d(T −1)−T curve for the PCMO film. The lower panel shows strain-induced for the PCMO film under H = 0 and 9 T, respectively.
Change in the resistance of the PCMO film at several fixed temperatures as a function of bipolar electric field applied to the PMN-PT substrate. The inset of (a) presents the change in the resistance of the PCMO film when positive electric field applied to positively poled PMN-PT substrate at 300 and 330 K, respectively.
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