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bixbyite structure: (a) Ideal undistorted parent crystal structure; (b) side view of the (111) surface. Dashed lines separate stoichiometric trilayers; (c) top view of the (111) surface formed by a stoichiometric trilayer. Thin solid lines illustrate the 4:1 coincidence lattice of InN (0001) relative to (111).
XRD data of the InN layer grown on bulk (111): (a) scan. (b) and (c) -scans recorded at the () and (440) reflections of wurtzite InN and cubic , correspondingly.
Normalized Raman spectra acquired in backscattering geometry from: (a) the sample surface, (b) backside, and (c) reference spectrum of the wafer. Excitation with a 632.8 nm line of a He-Ne laser; (d) PL spectrum recorded at room temperature.
(a) High-resolution TEM image of the interface between InN and substrate taken along the  direction of InN. The inset is a magnification of the image showing the regular structure of the interface. The image was taken using conditions providing for amplitude contrast of the materials. (b) Inverse FFT filtered representation of (a) done using reciprocal vectors () and () for InN and , respectively.
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