banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Growth of wurtzite InN on bulk In2O3(111) wafers
Rent this article for
View: Figures


Image of FIG. 1.
FIG. 1.

bixbyite structure: (a) Ideal undistorted parent crystal structure; (b) side view of the (111) surface. Dashed lines separate stoichiometric trilayers; (c) top view of the (111) surface formed by a stoichiometric trilayer. Thin solid lines illustrate the 4:1 coincidence lattice of InN (0001) relative to (111).

Image of FIG. 2.
FIG. 2.

XRD data of the InN layer grown on bulk (111): (a) scan. (b) and (c) -scans recorded at the () and (440) reflections of wurtzite InN and cubic , correspondingly.

Image of FIG. 3.
FIG. 3.

Normalized Raman spectra acquired in backscattering geometry from: (a) the sample surface, (b) backside, and (c) reference spectrum of the wafer. Excitation with a 632.8 nm line of a He-Ne laser; (d) PL spectrum recorded at room temperature.

Image of FIG. 4.
FIG. 4.

(a) High-resolution TEM image of the interface between InN and substrate taken along the [] direction of InN. The inset is a magnification of the image showing the regular structure of the interface. The image was taken using conditions providing for amplitude contrast of the materials. (b) Inverse FFT filtered representation of (a) done using reciprocal vectors () and () for InN and , respectively.


Article metrics loading...


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth of wurtzite InN on bulk In2O3(111) wafers