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Effective passivation of In0.2Ga0.8As by HfO2 surpassing Al2O3 via in-situ atomic layer deposition
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10.1063/1.4762833
/content/aip/journal/apl/101/17/10.1063/1.4762833
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/17/10.1063/1.4762833
/content/aip/journal/apl/101/17/10.1063/1.4762833
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/content/aip/journal/apl/101/17/10.1063/1.4762833
2012-10-22
2014-10-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effective passivation of In0.2Ga0.8As by HfO2 surpassing Al2O3 via in-situ atomic layer deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/17/10.1063/1.4762833
10.1063/1.4762833
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