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Effective passivation of In0.2Ga0.8As by HfO2 surpassing Al2O3 via in-situ atomic layer deposition
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10.1063/1.4762833
/content/aip/journal/apl/101/17/10.1063/1.4762833
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/17/10.1063/1.4762833
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Figures

Image of FIG. 1.
FIG. 1.

Room temperature C-V and QSCV measurements of (a) ALD-HfAlO/ALD-HfO2/p-In0.2Ga0.8As and (d) ALD-Al2O3/p-In0.2Ga0.8As MOSCAPs, with the corresponding surface potentials of the semiconductor as a function of gate bias derived from QSCV shown in (b) and (e). (c) and (f) are the C-V characteristics measured at 100 °C of ALD-HfAlO/ALD-HfO2 after 850 °C RTA and ALD-Al2O3/p-In0.2Ga0.8As after 550 °C annealing. Insets (a) and (d) display J-E behavior ofALD-HfAlO/ALD-HfO2/p-In0.2Ga0.8As and C-V characteristics of ALD-Al2O3/p-In0.2Ga0.8As after 850 °C RTA, respectively.

Image of FIG. 2.
FIG. 2.

Room temperature C-V and QSCV measurements of (a) ALD-HfAlO/ALD-HfO2/n-In0.2Ga0.8As, and (d) ALD-Al2O3/n-In0.2Ga0.8As MOSCAPs, with the corresponding surface potentials of the semiconductor as a function of gate bias derived from QSCV shown in (b) and (e). (c) and (f) are the C-V characteristics measured at 100 °C of ALD-HfAlO/ALD-HfO2 after 850 °C RTA and ALD-Al2O3/n-In0.2Ga0.8As after 550 °C annealing.

Image of FIG. 3.
FIG. 3.

Dit (E) vs E for the ALD-HfAlO/ALD-HfO2 and ALD-Al2O3/In0.2Ga0.8As MOSCAPs derived by temperature-dependent conductance method and QSCV from the data in Figs. 1 and 2. The Dit spectra calculated from the conductance method in the n-MOSCAPs and the p-MOSCAPs measured at 100 °C were plotted in the regions around the mid-gap of In0.2Ga0.8As. The measurements at room temperature have not given proper Gp /ω curves, thus the Dit spectra in regions away from the midgap were not plotted.

Image of FIG. 4.
FIG. 4.

XPS spectra of (a) As 2p1/2, (b) Ga 2p3/2, and (c) In 3d3/2 core-levels and the fits are shown in upper and lower panels for 0.8 nm thick in-situ ALD-HfO2 and ALD-Al2O3 on In0.2Ga0.8As, respectively.

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/content/aip/journal/apl/101/17/10.1063/1.4762833
2012-10-22
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effective passivation of In0.2Ga0.8As by HfO2 surpassing Al2O3 via in-situ atomic layer deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/17/10.1063/1.4762833
10.1063/1.4762833
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