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Effect of diamond like carbon layer on heat dissipation and optoelectronic performance of vertical-type InGaN light emitting diodes
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10.1063/1.4764007
/content/aip/journal/apl/101/17/10.1063/1.4764007
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/17/10.1063/1.4764007
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic of the LED structure embedded with a DLC layer after (a) wafer bonding to Si substrate and (b) sapphire separating by laser lift-off process.

Image of FIG. 2.
FIG. 2.

Cumulative structure functions for the LEDs embedded with and without a DLC layer.

Image of FIG. 3.
FIG. 3.

Surface temperature distributions for the LEDs embedded with and without a DLC layer under the driving currents of 350 and 700 mA.

Image of FIG. 4.
FIG. 4.

Current–voltage characteristics of the LEDs embedded with and without a DLC layer. The inset is a LED structure embedded with the DLC layer after the mesa and electrode processes.

Image of FIG. 5.
FIG. 5.

Output powers and wall plug efficiencies as a function of injection current for LEDs embedded with and without a DLC layer.

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/content/aip/journal/apl/101/17/10.1063/1.4764007
2012-10-23
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of diamond like carbon layer on heat dissipation and optoelectronic performance of vertical-type InGaN light emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/17/10.1063/1.4764007
10.1063/1.4764007
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