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Simulated MD as a function of the energy density of the laser pulse, considering a laser wavelength of 308 nm, of a crystalline Ge sample (thick blue line), and of a sample with a 70 nm-thick amorphous Ge layer on the top (thin red line). The calculation was performed with a model based on the phase field approach.
(a) and (b) The SIMS Sb profiles in Ge just after amorphization (black dotted line) and after excimer laser annealing with an energy density of ∼360 mJ/cm2 or ∼600 mJ/cm2, respectively, while (c) and (d) show the charge carrier profiles measured by SRP, corresponding to the electrically active Sb profiles, of the same samples plotted in upper panels (a) and (b), respectively. The thin red and thick blue continuous lines are for one and five pulses, respectively.
XTEM image of the Ge sample annealed with five laser pulses at an energy density of ∼360 mJ/cm2.
Simulated profile after irradiations at a fluence of 360 mJ/cm2 after 1, 3, and 5 pulses (thin red, intermediate green, and thick blue continuous lines, respectively).
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