1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Dielectric strength, optical absorption, and deep ultraviolet detectors of hexagonal boron nitride epilayers
Rent:
Rent this article for
USD
10.1063/1.4764533
/content/aip/journal/apl/101/17/10.1063/1.4764533
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/17/10.1063/1.4764533
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) XRD θ–2θ scans of 1 μm thick hBN and wurtzite AlN epilayers grown on sapphire substrate by MOCVD. The inset shows the schematics of hBN and AlN epilayers. The relative XRD intensities are indicated for hBN and AlN. (b) Room temperature (300 K) PL spectra of hBN and AlN epilayers grown on sapphire substrate by MOCVD.

Image of FIG. 2.
FIG. 2.

(a) In plane I–V characteristics of a hBN MSM photodetector fabricated from the layer structure shown in the inset of Fig. 1(a). (b) The relative spectral response of hBN MSM detector measured at Vb = 30 V. The inset is a microscope image of the hBN MSM photodetector with a device size of 1.25 mm × 0.8 mm and 4 μm/4 μm finger width/spacing used for the measurements.

Image of FIG. 3.
FIG. 3.

(a) The relative photoresponsivity of hBN MSM detector as a function of the applied bias voltage and (b) photocurrent decay kinetics of hBN MSM detector measured at room temperature for λexc = 219 nm.

Image of FIG. 4.
FIG. 4.

(a) Schematic of an hBN epilayer released from the host sapphire substrate for breakdown field (EB) measurement. The structure has a cross section area of about ∼4 mm2. (b) Out-of-plane (vertical) I–V characteristics of a released hBN epilayer. The inset is a microscope image of the device employed for EB measurement.

Loading

Article metrics loading...

/content/aip/journal/apl/101/17/10.1063/1.4764533
2012-10-25
2014-04-23
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dielectric strength, optical absorption, and deep ultraviolet detectors of hexagonal boron nitride epilayers
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/17/10.1063/1.4764533
10.1063/1.4764533
SEARCH_EXPAND_ITEM