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(a) XRD θ–2θ scans of 1 μm thick hBN and wurtzite AlN epilayers grown on sapphire substrate by MOCVD. The inset shows the schematics of hBN and AlN epilayers. The relative XRD intensities are indicated for hBN and AlN. (b) Room temperature (300 K) PL spectra of hBN and AlN epilayers grown on sapphire substrate by MOCVD.
(a) In plane I–V characteristics of a hBN MSM photodetector fabricated from the layer structure shown in the inset of Fig. 1(a). (b) The relative spectral response of hBN MSM detector measured at Vb = 30 V. The inset is a microscope image of the hBN MSM photodetector with a device size of 1.25 mm × 0.8 mm and 4 μm/4 μm finger width/spacing used for the measurements.
(a) The relative photoresponsivity of hBN MSM detector as a function of the applied bias voltage and (b) photocurrent decay kinetics of hBN MSM detector measured at room temperature for λexc = 219 nm.
(a) Schematic of an hBN epilayer released from the host sapphire substrate for breakdown field (EB) measurement. The structure has a cross section area of about ∼4 mm2. (b) Out-of-plane (vertical) I–V characteristics of a released hBN epilayer. The inset is a microscope image of the device employed for EB measurement.
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