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Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructures
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10.1063/1.4764556
/content/aip/journal/apl/101/18/10.1063/1.4764556
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/18/10.1063/1.4764556
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Band diagrams, growth temperature profiles, and cross-sectional TEM images of sample A with separate confinement (a) and sample B without separate confinement (b). The upper AlGaAs barrier in sample A is grown at the GaAsBi growth temperature 320 °C.

Image of FIG. 2.
FIG. 2.

High-resolution x-ray diffraction patterns of - scans from (004) planes of sample A and sample B. The red lines are the best fit models of the experimental data.

Image of FIG. 3.
FIG. 3.

High resolution bright field cross-sectional TEM image of sample A with separate confinement. Clear lattice images and sharp interfaces between upper AlGaAs and GaAs layers can be seen.

Image of FIG. 4.
FIG. 4.

Photoluminescence spectra at RT: Sample A with separate confinement (blue curve) and sample B without separate confinement (red curve). The photoexcitation density is 1.4 W/cm2 and the PL peak intensity of sample A is 10 times higher than that of sample B.

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/content/aip/journal/apl/101/18/10.1063/1.4764556
2012-10-29
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/18/10.1063/1.4764556
10.1063/1.4764556
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