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Band diagrams, growth temperature profiles, and cross-sectional TEM images of sample A with separate confinement (a) and sample B without separate confinement (b). The upper AlGaAs barrier in sample A is grown at the GaAsBi growth temperature 320 °C.
High-resolution x-ray diffraction patterns of - scans from (004) planes of sample A and sample B. The red lines are the best fit models of the experimental data.
High resolution bright field cross-sectional TEM image of sample A with separate confinement. Clear lattice images and sharp interfaces between upper AlGaAs and GaAs layers can be seen.
Photoluminescence spectra at RT: Sample A with separate confinement (blue curve) and sample B without separate confinement (red curve). The photoexcitation density is 1.4 W/cm2 and the PL peak intensity of sample A is 10 times higher than that of sample B.
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