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Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells
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10.1063/1.4765068
/content/aip/journal/apl/101/18/10.1063/1.4765068
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/18/10.1063/1.4765068
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(left) Simulated equilibrium band diagrams (0 applied bias) co-plotted with the field strength as a function of position for samples A, B, and C. (right) Enlarged views of center 20 nm (boxed) of each structure for clarity.

Image of FIG. 2.
FIG. 2.

External quantum efficiency for samples A, B, and C plotted at 0 applied bias (dotted curve), reverse bias corresponding to calculated flat-band quantum wells (solid curve), and a uniform reverse bias of −5 V (inset).

Image of FIG. 3.
FIG. 3.

(left) Current density vs. bias for samples A, and C having 3.8, and 9.7 nm barriers, respectively, as a function of temperature from 150 to 393 K with and without 1-sun intensity illumination. Data for sample B, with 6.5 nm barriers, is also shown from 296 to 393 K. (right) Schematics for relevant escape mechanisms for each sample: T = tunneling and TE = thermionic emission.

Image of FIG. 4.
FIG. 4.

Calculated lifetimes for thermionic emission (TE) at 300 K and 400 K and tunneling (T) at 300 K for electrons (e) and holes (h) from the lowest energy bound states of the quantum wells in the three structures.

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/content/aip/journal/apl/101/18/10.1063/1.4765068
2012-10-29
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/18/10.1063/1.4765068
10.1063/1.4765068
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