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(left) Simulated equilibrium band diagrams (0 applied bias) co-plotted with the field strength as a function of position for samples A, B, and C. (right) Enlarged views of center 20 nm (boxed) of each structure for clarity.
External quantum efficiency for samples A, B, and C plotted at 0 applied bias (dotted curve), reverse bias corresponding to calculated flat-band quantum wells (solid curve), and a uniform reverse bias of −5 V (inset).
(left) Current density vs. bias for samples A, and C having 3.8, and 9.7 nm barriers, respectively, as a function of temperature from 150 to 393 K with and without 1-sun intensity illumination. Data for sample B, with 6.5 nm barriers, is also shown from 296 to 393 K. (right) Schematics for relevant escape mechanisms for each sample: T = tunneling and TE = thermionic emission.
Calculated lifetimes for thermionic emission (TE) at 300 K and 400 K and tunneling (T) at 300 K for electrons (e) and holes (h) from the lowest energy bound states of the quantum wells in the three structures.
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