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Direct probing of density of states of reduced graphene oxides in a wide voltage range by tunneling junction
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10.1063/1.4765361
/content/aip/journal/apl/101/18/10.1063/1.4765361
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/18/10.1063/1.4765361
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Transport characterization of rGO sheets. (a) SEM image of a rGO Ohmic-contacted device. (b) Configuration of the conductance measurement. (c) Gate voltage dependence of the rGO conductance at a bias voltage of 0.5 V. (d) Linear dependence of conductance in logarithm scale on at temperatures T from 80 to 300 K.

Image of FIG. 2.
FIG. 2.

DOS characterization. SEM image (top view) of a rGO tunneling-junction device (a) and the device configuration with a circuit for the meter connection (b). AFM images of a multi-layer (c) and a single-layer (d) rGO sheet with corresponding line profiles in (e) and (f). Differential conductance (dI/dV) as a function of bias voltage for the multi-layer (g) and the single-layer (h) rGO sheet. The red line in (h) describes a fitting to a power law of with .

Image of FIG. 3.
FIG. 3.

(a) Gate voltage dependence of differential conductance. (b) Energy position of the Dirac point, extracted from the minimum of the differential conductance in (a), as a function of gate voltage.

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/content/aip/journal/apl/101/18/10.1063/1.4765361
2012-11-02
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Direct probing of density of states of reduced graphene oxides in a wide voltage range by tunneling junction
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/18/10.1063/1.4765361
10.1063/1.4765361
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