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High magnetoresistance in graphene nanoribbon heterojunction
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10.1063/1.4765364
/content/aip/journal/apl/101/18/10.1063/1.4765364
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/18/10.1063/1.4765364
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic diagram of a two-sided dog-bone MS-aGNR heterostructure. (b) Conductance of the MS-aGNR heterostructure at zero B-field. The thin solid (dotted) curve shows the conductance of the ideal SC (M)-aGNR. The conductance of the MS-aGNR heterostructure is suppressed in the energy range corresponding to the first subband of the SC-aGNR. (c) When a finite B-field is applied, however, finite conductance is observed in the first subband. This shows that, within the energy range of the first subband, conductance of the MS-aGNR heterostructure can be modulated by the B-field.

Image of FIG. 2.
FIG. 2.

The spatial distribution of electron density, D at EF = 0.2 eV (first subband), at B-fields corresponding to flux values of (a) , (b) , and (c) . The electrons are completely reflected across the MS-junction at . The MS-junction becomes increasingly transparent with increasing B-field. At higher B-field, the electron density accumulates at the edges. (d),(e) Depict the band structure of the lowest conduction and valence bands at different B-field for (d) SC-aGNR and (e) M-aGNR, and flux values of

Image of FIG. 3.
FIG. 3.

(a) Conductance and (b) MR ratio, across the MS-aGNR with increasing B-field at different temperatures (T = 100, 150, 200, 300 K). In all the cases, the conductance and MR increases with increasing B-field. (c) Conductance and (d) MR with increasing electron energy at B = 10 T. The MR ratio is always suppressed at higher temperature.

Image of FIG. 4.
FIG. 4.

(a) MS-aGNR magnetic-FET device with metallic contacts and back-gate. The back-gate is used to vary the Fermi energy. ISD-VSD curve for (b) E F = 0, (c) E F = 0.01 eV, and (d) E F = 0.05 eV at low temperature T = 150 K and different B-fields (B = 0, 5, 10 T). ISD-VSD curve for different temperatures, i.e., (e) T = 150 K, (f) T = 200 K, and (g) T = 300 K, at electron energy E F = 0 at different B-field. In all the plots, the dotted lines represent the MR at B = 10 T.

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/content/aip/journal/apl/101/18/10.1063/1.4765364
2012-11-02
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High magnetoresistance in graphene nanoribbon heterojunction
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/18/10.1063/1.4765364
10.1063/1.4765364
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