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(a) Schematic diagram of a two-sided dog-bone MS-aGNR heterostructure. (b) Conductance of the MS-aGNR heterostructure at zero B-field. The thin solid (dotted) curve shows the conductance of the ideal SC (M)-aGNR. The conductance of the MS-aGNR heterostructure is suppressed in the energy range corresponding to the first subband of the SC-aGNR. (c) When a finite B-field is applied, however, finite conductance is observed in the first subband. This shows that, within the energy range of the first subband, conductance of the MS-aGNR heterostructure can be modulated by the B-field.
The spatial distribution of electron density, D at EF = 0.2 eV (first subband), at B-fields corresponding to flux values of (a) , (b) , and (c) . The electrons are completely reflected across the MS-junction at . The MS-junction becomes increasingly transparent with increasing B-field. At higher B-field, the electron density accumulates at the edges. (d),(e) Depict the band structure of the lowest conduction and valence bands at different B-field for (d) SC-aGNR and (e) M-aGNR, and flux values of
(a) Conductance and (b) MR ratio, across the MS-aGNR with increasing B-field at different temperatures (T = 100, 150, 200, 300 K). In all the cases, the conductance and MR increases with increasing B-field. (c) Conductance and (d) MR with increasing electron energy at B = 10 T. The MR ratio is always suppressed at higher temperature.
(a) MS-aGNR magnetic-FET device with metallic contacts and back-gate. The back-gate is used to vary the Fermi energy. ISD-VSD curve for (b) E F = 0, (c) E F = 0.01 eV, and (d) E F = 0.05 eV at low temperature T = 150 K and different B-fields (B = 0, 5, 10 T). ISD-VSD curve for different temperatures, i.e., (e) T = 150 K, (f) T = 200 K, and (g) T = 300 K, at electron energy E F = 0 at different B-field. In all the plots, the dotted lines represent the MR at B = 10 T.
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