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Positive colossal magnetoresistance observed in Co doped amorphous carbon/silicon heterostructures
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10.1063/1.4765648
/content/aip/journal/apl/101/18/10.1063/1.4765648
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/18/10.1063/1.4765648
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Figures

Image of FIG. 1.
FIG. 1.

(a) Cross-sectional TEM image of the annealed Co-C film. (b) HRTEM image of Co-C/Si interface. (c) Cross-sectional TEM image showing Co particles dispersing in the a-C film. (d) Fourier transform pattern showing the amorphous structure.

Image of FIG. 2.
FIG. 2.

(a) Raman spectrum of the annealed Co-C film at room temperature. The positions of the D and G peaks are labeled at 1358 cm−1 and 1593 cm−1. (b)Confocal three-dimensional Raman images of Co-C films by detecting the intensity of the D band (sp2 Raman image), while raster scanning the area 56 × 56 μm in the 256 × 256 pixel image.

Image of FIG. 3.
FIG. 3.

I–V characteristics of the annealed Co-C/Si heterostructure at different temperatures. The inset shows the schematic illustration of the electrical measurement.

Image of FIG. 4.
FIG. 4.

I–V curves of the annealed Co-C/Si heterostructure under different applied magnetic fields (placed vertically on the sample), when the temperatures are, respectively, (a) 55 K, (b) 160 K, (c) 240 K, and (d) 300 K. The insets in (a) and (d) show the amplification of partial I–V curves at positive and negative voltages, respectively.

Image of FIG. 5.
FIG. 5.

The MR-bias relations of the annealed Co-C/Si heterostructure under different magnetic fields at (a) 55 K and (b) 160 K. The inset in (b) shows the MR-bias relation of the non-annealed sample on application of H = 5 T at 160 K.

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/content/aip/journal/apl/101/18/10.1063/1.4765648
2012-11-01
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Positive colossal magnetoresistance observed in Co doped amorphous carbon/silicon heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/18/10.1063/1.4765648
10.1063/1.4765648
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