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(a) Cross-sectional TEM image of the annealed Co-C film. (b) HRTEM image of Co-C/Si interface. (c) Cross-sectional TEM image showing Co particles dispersing in the a-C film. (d) Fourier transform pattern showing the amorphous structure.
(a) Raman spectrum of the annealed Co-C film at room temperature. The positions of the D and G peaks are labeled at 1358 cm−1 and 1593 cm−1. (b)Confocal three-dimensional Raman images of Co-C films by detecting the intensity of the D band (sp2 Raman image), while raster scanning the area 56 × 56 μm in the 256 × 256 pixel image.
I–V characteristics of the annealed Co-C/Si heterostructure at different temperatures. The inset shows the schematic illustration of the electrical measurement.
I–V curves of the annealed Co-C/Si heterostructure under different applied magnetic fields (placed vertically on the sample), when the temperatures are, respectively, (a) 55 K, (b) 160 K, (c) 240 K, and (d) 300 K. The insets in (a) and (d) show the amplification of partial I–V curves at positive and negative voltages, respectively.
The MR-bias relations of the annealed Co-C/Si heterostructure under different magnetic fields at (a) 55 K and (b) 160 K. The inset in (b) shows the MR-bias relation of the non-annealed sample on application of H = 5 T at 160 K.
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