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1. B. S. Ong, Y. L. Wu, Y. N. Li, P. Liu, and H. L. Pan, Chem.-Eur. J. 14, 4766 (2008).
2. M. E. Gershenson, V. Podzorov, and A. F. Morpurgo, Rev. Mod. Phys. 78, 973 (2006).
3. M. M. Payne, S. R. Parkin, J. E. Anthony, C. C. Kuo, and T. N. Jackson, J. Am. Chem. Soc. 127, 4986 (2005);
3. J. E. Anthony, D. L. Eaton, and S. R. Parkin, Org. Lett. 4, 15 (2002);
3. S. Subramanisan, S. K. Park, S. R. Parkin, V. Podzorov, T. N. Jackson, and J. E. Anthony, J. Am. Chem. Soc. 130, 2706 (2008).
4. J. Chen and Y. Cao, Acc. Chem. Res. 42, 1709 (2009);
4. Y. J. Cheng, S.-H. Yang, and C.-S. Hsu, Chem. Rev. 109, 5868 (2009).
5. G. Yu, J. Gao, J. C. Hummelen, F. Wudl, and A. J. Heeger, Science 270, 1789 (1995);
5. B. C. Thompson and J. M. J. Frechet, Angew. Chem., Int. Ed. 47, 58 (2008).
6. C. W. Tang and S. A. Van Slyke, Appl. Phys. Lett. 51, 913 (1987).
7. M. Gross, D. C. Muller, H. G. Nothofer, U. Scherf, D. Neher, C. Brauchle, and K. Meerholz, Nature 405, 661 (2000).
8. C. Reese and Z. Bao, Mater. Today 10, 20 (2007).
9. L. B. Roberson, J. Am. Chem. Soc. 127, 3069 (2005).
10. V. Podzorov, Phys. Rev. Lett. 93, 086602 (2004).
11. J. Jang, S. Nam, K. Im, J. Hur, S. N. Cha, J. Kim, H. B. Son, H. Suh, M. A. Loth, J. E. Anthony, J.-J. Park, C. E. Park, J. M. Kim, and K. Kim, Adv. Funct. Mater. 22, 1005 (2012).
12. O. D. Jurchescu, S. Subramanian, R. J. Kline, S. D. Hudson, J. E. Anthony, T. N. Jackson, and D. J. Gundlach, Chem. Mater. 20, 6733 (2008).
13. H. Minemawari, T. Yamada, H. Matsui, J. Tsutsumi, S. Haas, R. Chiba, R. Kumai, and T. Hasegawa, Nature 475, 364 (2011).
14. H. Jiang, K. J. Tan, K. K. Zhang, X. Chen, and C. Kloc, J. Mater. Chem. 21, 4771 (2011).
15. S. Haas, Y. Takahashi, K. Takimiya, and T. Hasegawa, Appl. Phys. Lett. 95, 022111 (2009).
16. M. Mas-Torrent, M. Durkut, P. Hadley, X. Ribas, and C. Rovira, J. Am. Chem. Soc. 126, 984 (2004);
16. M. Mas-Torrent, P. Hadley, S. T. Bromley, X. Ribas, J. Tarres, M. Mas, E. Molins, J. Veciana, and C. Rovira, J. Am. Chem. Soc. 126, 8546 (2004).
17. Y.-H. Kim, B. Yoo, J. E. Anthony, and S. K. Park, Adv. Mater. 24, 497 (2012).
18. Y. Yomogida, J. Pu, H. Shimotani, S. Ono, S. Hotta, Y. Iwasa, and T. Takenobu, Adv. Mater. 24, 4392 (2012).
19. X. Zhang, J. Jie, W. Zhang, C. Zhang, L. Luo, Z. He, X. Zhang, W. Zhang, C. Lee, and S. Lee, Adv. Mater. 20, 2427 (2008).
20. Y. Zhou, L. Wang, J. Wang, J. Pei, and Y. Cao, Adv. Mater. 20, 3745 (2008);
20. Y. Zhou, T. Lei, L. Wang, J. Pei, Y. Cao, and J. Wang, Adv. Mater. 22, 1484 (2010).
21. T. He, X. Zhang, J. Jia, Y. Li, and X. Tao, Adv. Mater. 24, 2171 (2012).
22. L. Jiang, W. Hu, Z. Wei, W. Xu, and H. Meng, Adv. Mater. 21, 3649 (2009).
23. Md. M. Islam, F. Valiyev, H.-F. Lu, M.-Y. Kuo, I. Chao, and Y.-T. Tao, Chem. Commun. 47, 2008 (2011).
24. V. Wagner, P. Wobkenberg, A. Hoppe, and J. Seekamp, Appl. Phys. Lett. 89, 243515 (2006).
25. J. H. Park, D. S. Chung, J. W. Park, T. Ahn, H. Kong, Y. K. Jung, J. Lee, M. H. Yi, C. E. Park, S. K. Kwon, and H. K. Shim, Org. Lett. 9, 2573 (2007);
25. D. S. Chung, J. W. Park, J. H. Park, G. H. Kim, H. S. Lee, D. H. Lee, H. K. Shim, S. K. Kwon, and C. E. Park, J. Mater. Chem. 20, 524 (2010).
26. Y. M. Park, J. Daniel, M. Heeney, and A. Salleo, Adv. Mater. 23, 971 (2011).
27. S. H. Kim, M. Jang, H. Yang, J. E. Anthony, and C. E. Park, Adv. Func. Mater. 21, 2198 (2011).
28. S. M. Sze, Physics of Semiconductor Devices (John Wiley & Sons, New York, 1981).
29. Z. Bao and J. Locklin, Organic Field-Effect Transistors (CRC, New York, 2006).
30. G. M. Khattak and C. G. Scott, J. Phys.: Condens. Matter. 3, 8619 (1991).
31. G. Konstantatos and E H. Sargent, Proc. IEEE 97, 1666 (2009).
32. X. Gong, M. H. Tong, Y. J. Xia, W. Z. Cai, J. S. Moon, Y. Cao, G. Yu, C. L. Shieh, B. Nilsson, and A. J. Heeger, Science 325, 1665 (2009).

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A high-quality organic single crystal transistor (OSCT) was fabricated via solution-processing using a novel anthracene derivative (TIPsAntNE). The OSCT fabricated on a surface-modified high-capacitance ZrO substrate provided a transistor that operated at low voltages with a high mobility up to 4.1 cm2/Vs and negligible hysteresis (a V shift of <20 mV). Importantly, the TIPsAntNE OSCT functioned under a high-frequency AC signal with a gate bias as high as 30 kHz. These are crucial operational requirements for commercial applications of organic transistors. The photoresponsivity (>1 A/W) of the TIPsAntNE single crystal was high over a wide range across the visible spectrum.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-speed solution-processed organic single crystal transistors using a novel triisopropylsilylethynyl anthracene derivative