Full text loading...
Normalized TMR vs. in-plane magnetic field for different bias voltages. The strength and polarity of the bias voltage alter the perpendicular magnetic anisotropy of the CoFeB sensing layer, which is reflected by a change in the shape of the TMR curves. Inset: the MTJ structure with a bias voltage.
Normalized TMR vs. in-plane magnetic field curves for = ±1 V. The solid lines represent linear fits and the dashed lines indicate the linear operating range. The field sensitivity is 0.082%/Oe and 0.149%/Oe for = 1 V and = −1 V, respectively. Inset: linear fit residuals of the sensor vs. magnetic field curves within the operating range.
Sensitivity of the magnetic field sensor measured for = ±1 V, using a four-probe lock-in detection scheme (shown in the inset). The maximum sensitivity, measured for = 0 Oe, increases by a factor of two when the polarity of the 1 V bias voltage is reversed.
Perpendicular magnetic anisotropy energy of the CoFeB sensing layer as a function of applied electric field. The data were extracted by integrating vs. magnetic field curves for MTJs with an area of 4.5 and 108 (inset).
Article metrics loading...