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Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures
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10.1063/1.4765351
/content/aip/journal/apl/101/19/10.1063/1.4765351
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/19/10.1063/1.4765351
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Figures

Image of FIG. 1.
FIG. 1.

Experimental (dotted lines) and best-model calculated (solid lines) , and spectra for the AlGaN/GaN HEMT structure deposited on 4 H-SiC in the spectral range from 10 to 35 THz at room temperature and . The frequencies of the IR-active phonon modes of the GaN and AlGaN layers and the SiC substrate are indicated by brackets (solid: TO; dotted: LO).

Image of FIG. 2.
FIG. 2.

Experimental (dotted lines) and best-model calculated (solid lines) Mueller matrix difference spectra (, left panel; , right panel) () for the AlGaN/GaN HEMT structure in the range from 0.22 to 0.32 THz. The spectra were obtained at an angle of incidence for temperatures ranging from 1.5 to 300 K. Note, that the spectra for T=75 K and larger are shifted in increments of 0.1 with respect to the T=1.5 K data.

Image of FIG. 3.
FIG. 3.

Best-model parameters mobility (symbols, left panel) and effective mass m (symbols, right panel) obtained from the THz-OHE measurements for temperatures ranging from 1.5 to 300 K. The error limits correspond to 90% reliability.

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/content/aip/journal/apl/101/19/10.1063/1.4765351
2012-11-06
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/19/10.1063/1.4765351
10.1063/1.4765351
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