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(a) FESEM image of rubrene nanowires liberated from the host AAO matrix. (Inset) Co-rubrene nanowire heterojunction. (b) Schematic of the Co-rubrene-Ni spin valve. The magnetic field (B) has been applied parallel to the nanowire axis (easy axis) and perpendicular to the Ni thin film (hard axis). (c) Rigid energy band diagram of the spin valve. Defect states are shown in the HOMO-LUMO gap. (d) XRD plots of blank AAO, unannealed and annealed rubrene nanowires grown in AAO. (Inset) Molecular structure of rubrene.
(a)–(d) Magnetoresistance of Co-rubrene nanowire (amorphous)-Ni spin valve at four different temperatures. (e) (Bottom inset) Spin valve magnetoresistance vs. temperature. (Main image) Spin relaxation length vs. temperature. (Top inset) Spin relaxation time vs. temperature. (f) Current-voltage characteristics of the spin valve device as a function of temperature. (Top inset) ln R vs. at 0.5 V. Three-dimensional variable range hopping fit to the high temperature data is shown by the red line. (Bottom inset) Magnetoresistance of Co-rubrene nanowire (annealed)-Ni spin valve.
Magnetoresistance measurements on four control samples. (a) Co nanowire-Ni thin film, (b) Co nanowire-rubrene nanowire-Ag thin film, (c) Ag nanowire-rubrene nanowire-Ni thin film, and (d) Al-rubrene nanowire-Ag thin film.
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