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The selective removal of metallic carbon nanotubes from As-grown arrays on insulating substrates
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Optical image of source and drain electrodes of several devices connected together in parallel on a quartz substrate. (b) SEM image of aligned CNT device channels. (c) Diagram of the process to selectively remove metallic CNTs from as-grown networks on insulating substrates. An external Si/SiO2 piece is brought into contact as a temporary global top gate. (d) Diagram of the lithographic separation of devices and completion with 75 nm Al2O3 and 55 nm Ti/Au local top gate.

Image of FIG. 2.
FIG. 2.

Transfer curve with an output curve inset for a typical CNT FET on quartz (a) using the as-grown CNT network and (b) after the selective removal of metallic CNTs was performed using an external top gate. The device was composed of two 100 μm wide channels each of 10 μm length. The transfer curves were taken at a source-drain bias of 1 V. With themetallic CNTs removed, the on/off ratio is >10 000, while that of the as-grown device was <10.

Image of FIG. 3.
FIG. 3.

Comparison of measured loss, Δ ds , for CNT FETs on quartz and silicon substrates.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The selective removal of metallic carbon nanotubes from As-grown arrays on insulating substrates