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ToF-SIMS profiles of Ti implanted Si samples with doses of 1013, 1014, 1015, and 1016 cm−2 and subsequently PLM at 1.4 J/cm2. The three implanted samples with the highest doses have Ti concentrations above the theoretical Mott limit.
Cross sectional TEM images and ED images of samples implanted with the doses of 1015 cm−2 (a) and 1016 cm−2 (b) and subsequently processed by PLM.
Variation of the sheet conductance spectral response normalized to the impinging light power as a function of the incident photon energy for the Si unimplanted reference sample, and for the four implanted samples with 1013, 1014, 1015, and 1016 cm−2 doses and subsequently PLM at 1.4 J/cm2. Measurements were carried out at 90 K.
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