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Evolution of local work function in epitaxial VO2 thin films spanning the metal-insulator transition
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View: Figures


Image of FIG. 1.
FIG. 1.

The VO2 film and the experimental configurations for transport and KPFM measurements.

Image of FIG. 2.
FIG. 2.

(a) W sample maps obtained at three temperatures during the heating (upper row) and cooling (lower row) of a VO2 thin film (area 1 μm2), (b) W sample and resistance curves with respect to temperature, and (c) histograms of W sample maps at three temperatures during heating.

Image of FIG. 3.
FIG. 3.

Energy band diagrams of (a) metallic VO2 () and semiconducting VO2 (), (b) interface with domains larger than the SCR width, and (c) region for domains smaller than the SCR width. Case (a) describes the band for a single, homogeneous phase. Cases (b) and (c) describe band banding in the vicinity of the domain boundaries of an electronically inhomogeneous sample near T MIT.

Image of FIG. 4.
FIG. 4.

(a) Maps of surface potential under an applied biasvoltage of 1 V between the electrodes on the VO2 (V surf,1V), (b) profiles of ΔV surface = V surface,1VV surface,0V, at 313 and 355 K, and (c) profiles of ΔV surface and W sample at 343 K.

Image of FIG. 5.
FIG. 5.

(a) Topography and four selected regions (denoted as colored circles) of a VO2 thin film surface and (b) temperature dependence of local W sample taken at the four regions.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Evolution of local work function in epitaxial VO2 thin films spanning the metal-insulator transition