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Effect of spin relaxation rate on the interfacial spin depolarization in ferromagnet/oxide/semiconductor contacts
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10.1063/1.4733478
/content/aip/journal/apl/101/2/10.1063/1.4733478
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/2/10.1063/1.4733478
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Figures

Image of FIG. 1.
FIG. 1.

High-field Hanle measurements (up to 3 T) on (a) CoFe/MgO/Si and (b) the CoFe/MgO/Ge contacts at 300 K under perpendicular (M B, closed circles) and in-plane (M//B, open circles) measurement schemes.

Image of FIG. 2.
FIG. 2.

Normal (ΔVnormal ) and inverted (ΔVinverted ) Hanle effects on (a) CoFe/MgO/Si and (b) CoFe/MgO/Ge contacts under M B (closed circles) and M//B (open circles) measurements, respectively, at an applied current (I) of −500 μA (spin injection condition) for various temperatures. (c) Interfacial spin depolarization effect () and (d) effective spin lifetime () as a function of the temperature (T) at the constant bias current (I) of −500 μA. (e) and (f) with T at the constant bias voltage (VB=0 ) of −0.3 V.

Image of FIG. 3.
FIG. 3.

(a)–(c) Calculated normal (M B, wine symbol) and inverted (M//B, brown symbols) Hanle curves. The spin lifetime (, blue symbols) was varied from 0.50 ns to 2.00 ns at a fixed value of of about 0.33 ns, corresponding to a value of 0.3 kOe. The ideal Hanle curves (blue symbols) without are also presented for comparison. (d) Calculated the RISD as a function of with the four different values of about 0.10, 0.33, 1.00, and ∞ ns, corresponding to values of about 1.0, 0.3, 0.1, and 0.0 kOe, respectively. (e) vs. plot for different values of . It is noted that the is the input value for the calculation and the is the extracted value from the calculated normal Hanle curve (see (a)–(c)).

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/content/aip/journal/apl/101/2/10.1063/1.4733478
2012-07-09
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of spin relaxation rate on the interfacial spin depolarization in ferromagnet/oxide/semiconductor contacts
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/2/10.1063/1.4733478
10.1063/1.4733478
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