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Confinement of vacancies during annealing of H implanted GaN sandwiched between two {InGaN/GaN} superlattices
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10.1063/1.4733619
/content/aip/journal/apl/101/2/10.1063/1.4733619
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/2/10.1063/1.4733619
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Figures

Image of FIG. 1.
FIG. 1.

Schematic representation of the different samples: reference sample (a), GaN boarded by one InGaN SL (b), GaN sandwiched by 2 InGaN SLs (c), and GaN sandwiched by 2 AlGaN SLs (d).

Image of FIG. 2.
FIG. 2.

Dark-field cross-section images of the reference GaN sample taken with g =  (a) and with g =  (b), and HRTEM image of one Frank DL (c). Bright-field underfocused cross-section images taken with g =  of the reference sample (d), containing one InGaN SL (e), two InGaN SLs (f), and two AlGaN SLs (g). All samples have been implanted with the high fluence and annealed at 700 °C for 10 min.

Image of FIG. 3.
FIG. 3.

Depth-distributions of mean sizes of pyramids in the reference sample (a), in the sample containing one InGaN SL (b), and in the sample containing two InGaN SLs (c). Depth-distributions of concentrations in the reference sample (d), in the sample containing one InGaN SL (e), and in the sample containing two InGaN SLs (f). Volume fraction occupied by the pyramids and cavities in the reference sample (g), in the sample containing one InGaN SL (h), and in the sample containing two InGaN SLs (i). Results compiled for “depth-classes” of 10 nm wide for the sizes and the concentrations and of 50 nm for the volume fraction. The relative uncertainties in these measurements are 5%, 20%, and 40%, respectively. The “size” of a pyramid is defined by the length of its base.

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/content/aip/journal/apl/101/2/10.1063/1.4733619
2012-07-09
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Confinement of vacancies during annealing of H implanted GaN sandwiched between two {InGaN/GaN} superlattices
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/2/10.1063/1.4733619
10.1063/1.4733619
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