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Band structures near the Fermi levels (zero energy point) for LaRu4Sb12 and LaOs4Sb12.
(a) Temperature dependence of Seebeck coefficient for LaTM4Sb12 and (b) Electronic density of states N(E) of valence band for LaFe4Sb12, LaOs4Sb12, and LaIr1Os3Sb12, and N(E) of conduction band for Co4Sb12, with T = 850 K in the Fermi-Dirac distribution function. |S| = 180 μV/K points are labeled.
(a) Band structure for LaIr1Os3Sb12, with energy position of 0.25 holes per unit cell at 850 K labeled and (b) temperature dependence of Seebeck coefficient and power factor for LaIr1Os3Sb12 and LaRh1Ru3Sb12. Hole concentrations are set to be 0.25 holes per unit cell. τ 0 = 3.0 × 10−11 s K eV−1 u.c.−1 is used.
Carrier concentration in the unit of holes per unit cell (or electrons per unit cell when negative), Seebeck coefficient, electrical conductivity, and power factor at 750 K of three p-type and one n-type skutterudites. Relaxation times τ and τ 0 = τ*N(EF )*T are also given.
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