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Increased dissipation from distributed etch holes in a lateral breathing mode silicon micromechanical resonator
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Image of FIG. 1.
FIG. 1.

FE simulation of the SE mode shape showing the T-shaped tethers flexing as the square-plate resonator vibrates, giving rise to anchor loss. Also shown are the relative thermal distribution contours associated with the relative stress gradients for the SE mode. Although a 3D model was used to simulate TED, a 2D topview is shown here instead for clearer visualization; (a) Plain resonator; (b) Resonator with distributed etch-holes. The pattern of the relative thermal distribution is similar to that of a plain design except whenever the etch holes disrupt the continuity of the thermal contours.

Image of FIG. 2.
FIG. 2.

FE simulation model to quantify Qanchor in an SE mode resonator by incorporating a PML to absorb the outgoing elastic waves from the T-shaped tethers. “Max disp”: Maximum displacement; “Min disp”: Minimum displacement.

Image of FIG. 3.
FIG. 3.

Optical micrograph of fabricated resonator with a circuit schematic of the bias configuration used in the electrical characterization of the device

Image of FIG. 4.
FIG. 4.

Measured S21 electrical transmissions of a pair of SE mode resonators with and without etch-holes on the same die; Q is 75% lower in the latter device relative to the former.


Generic image for table
Table I.

Summary of device feature sizes and a comparison between measured and simulated Q.

Generic image for table
Table II.

Summary of the key parameters used in the FE simulation models.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Increased dissipation from distributed etch holes in a lateral breathing mode silicon micromechanical resonator